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	Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors
	Li, Yunpeng; Yang, Jin; Wang, Yiming; Ma, Pengfei; Yuan, Yvzhuo; Zhang, Jiawei; Lin, Zhaojun; Zhou, Li; Xin, Qian; Song, Aimin
刊名	IEEE ELECTRON DEVICE LETTERS
	2018
卷号	39期号:2页码:208-211
关键词	Complementary inverter logic gates ring oscillator tin monoxide (SnO) indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT)
DOI	10.1109/LED.2017.2786237
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4571281
专题	山东大学
作者单位	Shandong Univ, Ctr Nanoelect, State
推荐引用方式 GB/T 7714	Li, Yunpeng,Yang, Jin,Wang, Yiming,et al. Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2018,39(2):208-211.
APA	Li, Yunpeng.,Yang, Jin.,Wang, Yiming.,Ma, Pengfei.,Yuan, Yvzhuo.,...&Song, Aimin.(2018).Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors.IEEE ELECTRON DEVICE LETTERS,39(2),208-211.
MLA	Li, Yunpeng,et al."Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors".IEEE ELECTRON DEVICE LETTERS 39.2(2018):208-211.

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