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	Eco-Friendly, Water-Induced IN₂O₃ Thin Films for High-Performance Thin-Film Transistors and Inverters
	Jianguo Lv; Li Zhu; Bing Yang; Gang He; Yuting Long
刊名	IEEE Transactions on Electron Devices
	2018
页码	1-7
关键词	Dielectrics Annealing Logic gates Thin film transistors Indium Inverters Surface morphology Environmentally friendly aqueous solution method high-k inverter thin-film transistor water-induced indium oxide.
ISSN号	0018-9383;1557-9646
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2154870
专题	安徽大学
作者单位	1.Anhui University, Hefei 230039, China 2.Jiangxi Normal University, Nanchang 330022, China 3.Anhui University, Hefei 230039, China 4.Hefei Normal University, Hefei 230061, China
推荐引用方式 GB/T 7714	Jianguo Lv,Li Zhu,Bing Yang,et al. Eco-Friendly, Water-Induced IN₂O₃ Thin Films for High-Performance Thin-Film Transistors and Inverters[J]. IEEE Transactions on Electron Devices,2018:1-7.
APA	Jianguo Lv,Li Zhu,Bing Yang,Gang He,&Yuting Long.(2018).Eco-Friendly, Water-Induced IN₂O₃ Thin Films for High-Performance Thin-Film Transistors and Inverters.IEEE Transactions on Electron Devices,1-7.
MLA	Jianguo Lv,et al."Eco-Friendly, Water-Induced IN₂O₃ Thin Films for High-Performance Thin-Film Transistors and Inverters".IEEE Transactions on Electron Devices (2018):1-7.

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