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	Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors
	Shuyun Zheng; Yun Zeng; Zhuojun Chen
刊名	IEEE Access
	2019
卷号	Vol.7页码:79989-79996
关键词	Field effect transistors Semiconductor device modeling Degradation Electric potential Logic gates Molybdenum Transition metal dichalcogenide (TMD) field-effect transistor (FET) total ionizing dose (TID) surface potential compact model
ISSN号	2169-3536
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4610459
专题	湖南大学
作者单位	School of Physics and Electronics, Hunan University, Changsha, China
推荐引用方式 GB/T 7714	Shuyun Zheng,Yun Zeng,Zhuojun Chen. Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors[J]. IEEE Access,2019,Vol.7:79989-79996.
APA	Shuyun Zheng,Yun Zeng,&Zhuojun Chen.(2019).Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors.IEEE Access,Vol.7,79989-79996.
MLA	Shuyun Zheng,et al."Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors".IEEE Access Vol.7(2019):79989-79996.

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