Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors | |
Shuyun Zheng; Yun Zeng; Zhuojun Chen | |
刊名 | IEEE Access
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2019 | |
卷号 | Vol.7页码:79989-79996 |
关键词 | Field effect transistors Semiconductor device modeling Degradation Electric potential Logic gates Molybdenum Transition metal dichalcogenide (TMD) field-effect transistor (FET) total ionizing dose (TID) surface potential compact model |
ISSN号 | 2169-3536 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4610459 |
专题 | 湖南大学 |
作者单位 | School of Physics and Electronics, Hunan University, Changsha, China |
推荐引用方式 GB/T 7714 | Shuyun Zheng,Yun Zeng,Zhuojun Chen. Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors[J]. IEEE Access,2019,Vol.7:79989-79996. |
APA | Shuyun Zheng,Yun Zeng,&Zhuojun Chen.(2019).Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors.IEEE Access,Vol.7,79989-79996. |
MLA | Shuyun Zheng,et al."Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors".IEEE Access Vol.7(2019):79989-79996. |
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