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科研机构
北京大学 [17]
上海财经大学 [3]
兰州大学 [1]
动物研究所 [1]
内容类型
期刊论文 [22]
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2016 [1]
2015 [1]
2014 [9]
2013 [10]
2012 [1]
学科主题
cell biolo... [1]
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Guidelines for the use and interpretation of assays for monitoring autophagy (3rd edition)
期刊论文
AUTOPHAGY, 2016, 卷号: 12, 期号: 1, 页码: 1-222
作者:
Klionsky, DJ
;
Abdelmohsen, K
;
Abe, A
;
Abedin, MJ
;
Abeliovich, H
收藏
  |  
浏览/下载:103/0
  |  
提交时间:2017/01/10
autolysosome
autophagosome
chaperone-mediated autophagy
flux
LC3
lysosome
macroautophagy
phagophore
stress
vacuole
Optimization Theory, Methods, and Applications in Engineering 2014
期刊论文
MATHEMATICAL PROBLEMS IN ENGINEERING, 2015
作者:
Tsai, Jung-Fa
;
Carlsson, John Gunnar
;
Ge, Dongdong
;
Hu, Yi-Chung
;
Shi, Jianming
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/08/22
Optimization Theory, Methods, and Applications in Engineering 2013
期刊论文
MATHEMATICAL PROBLEMS IN ENGINEERING, 2014
作者:
Tsai, Jung-Fa
;
Carlsson, John Gunnar
;
Ge, Dongdong
;
Hu, Yi-Chung
;
Shi, Jianming
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/08/22
Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor
期刊论文
应用物理学快报, 2014
Chen, Hsin-lu
;
Chang, Ting-Chang
;
Young, Tai-Fa
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
;
Zhang, Rui
;
Huang, Sheng-Yao
;
Chen, Kai-Huang
;
Lou, J. C.
;
Chen, Min-Chen
;
Shih, Chih-Cheng
;
Huang, Syuan-Yong
;
Chen, Jung-Hui
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/11
RANDOM-ACCESS MEMORY
PASSIVATION
RRAM
TFT
Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory
期刊论文
ieee electron device letters, 2014
Shih, Chih-Cheng
;
Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Zhang, Rui
;
Chen, Jung-Hui
;
Chen, Kai-Huang
;
Young, Tai-Fa
;
Chen, Hsin-Lu
;
Lou, Jen-Chung
;
Chu, Tian-Jian
;
Huang, Syuan-Yong
;
Bao, Ding-Hua
;
Sze, Simon M.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
ZnO
RRAM
ultra-violet light
current conduction mechanism
IMPROVEMENT
DEVICES
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
期刊论文
ieee electron device letters, 2014
Zhang, Rui
;
Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Huang, Syuan-Yong
;
Chen, Wen-Jen
;
Chen, Kai-Huang
;
Lou, Jen-Chung
;
Chen, Jung-Hui
;
Young, Tai-Fa
;
Chen, Min-Chen
;
Chen, Hsin-Lu
;
Liang, Shu-Ping
;
Syu, Yong-En
;
Sze, Simon M.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
Oxygen accumulation
indium tin oxide
Schottky emission
RRAM
RESISTIVE SWITCHING MEMORIES
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
期刊论文
ieee electron device letters, 2014
Chu, Tian-Jian
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Chang, Kuan-Chang
;
Zhang, Rui
;
Chen, Kai-Huang
;
Chen, Jung-Hui
;
Young, Tai-Fa
;
Huang, Jen-Wei
;
Lou, Jen-Chung
;
Chen, Min-Chen
;
Huang, Syuan-Yong
;
Chen, Hsin-Lu
;
Syu, Yong-En
;
Bao, Dinghua
;
Sze, Simon M.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/11
RRAM
hydrogen
resistive switching
tri-resistive states
HOPPING CONDUCTION
ORIGIN
RRAM
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
期刊论文
nanoscale research letters, 2014
Chen, Yi-Jiun
;
Chen, Hsin-Lu
;
Young, Tai-Fa
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
;
Zhang, Rui
;
Chen, Kai-Huang
;
Lou, Jen-Chung
;
Chu, Tian-Jian
;
Chen, Jung-Hui
;
Bao, Ding-Hua
;
Sze, Simon M.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
Carbon
Hydrogen redox
Conjugation double bond
RRAM
CO2 FLUID TREATMENT
RRAM DEVICES
HOPPING CONDUCTION
SILICON
TRANSITION
ORIGIN
FILMS
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
期刊论文
journal of supercritical fluids, 2014
Chang, Kuan-Chang
;
Chen, Jung-Hui
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Huang, Syuan-Yong
;
Zhang, Rui
;
Chen, Kai-Huang
;
Syu, Yong-En
;
Chang, Geng-Wei
;
Chu, Tian-Jian
;
Liu, Guan-Ru
;
Su, Yu-Ting
;
Chen, Min-Chen
;
Pan, Jhih-Hong
;
Liao, Kuo-Hsiao
;
Tai, Ya-Hsiang
;
Young, Tai-Fa
;
Sze, Simon M.
;
Ai, Chi-Fong
;
Wang, Min-Chuan
;
Huang, Jen-Wei
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
Supercritical fluid
RRAM
Hydration-dehydration reaction
Tin doping
ELECTROLYTE-BASED RERAM
CONDUCTIVE FILAMENTS
FILM
Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor
期刊论文
ieee electron device letters, 2014
Chen, Yi-Jiun
;
Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Chen, Hsin-Lu
;
Young, Tai-Fa
;
Tsai, Tsung-Ming
;
Zhang, Rui
;
Chu, Tian-Jian
;
Ciou, Jian-Fa
;
Lou, Jen-Chung
;
Chen, Kai-Huang
;
Chen, Jung-Hui
;
Zheng, Jin-Cheng
;
Sze, Simon M.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
DLC
HfO2
hydrogen
oxygen
RRAM
RANDOM-ACCESS MEMORY
MECHANISM
DEVICES
MODEL
RRAM
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