Characterization of Oxygen Accumulation in Indium-Tin-Oxide for   Resistance Random Access Memory

doi:10.1109/LED.2014.2316806

CORC > 北京大学 > 软件与微电子学院

	Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
	Zhang, Rui ; Chang, Kuan-Chang ; Chang, Ting-Chang ; Tsai, Tsung-Ming ; Huang, Syuan-Yong ; Chen, Wen-Jen ; Chen, Kai-Huang ; Lou, Jen-Chung ; Chen, Jung-Hui ; Young, Tai-Fa ; Chen, Min-Chen ; Chen, Hsin-Lu ; Liang, Shu-Ping ; Syu, Yong-En ; Sze, Simon M.
刊名	ieee electron device letters
	2014
关键词	Oxygen accumulation indium tin oxide Schottky emission RRAM RESISTIVE SWITCHING MEMORIES
DOI	10.1109/LED.2014.2316806
英文摘要	In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000337136900008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 17; ARTICLE; tcchang@mail.phys.nsysu.edu.tw; d9131802@gmail.com; 6; 630-632; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/164161]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Zhang, Rui,Chang, Kuan-Chang,Chang, Ting-Chang,et al. Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory[J]. ieee electron device letters,2014.
APA	Zhang, Rui.,Chang, Kuan-Chang.,Chang, Ting-Chang.,Tsai, Tsung-Ming.,Huang, Syuan-Yong.,...&Sze, Simon M..(2014).Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory.ieee electron device letters.
MLA	Zhang, Rui,et al."Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory".ieee electron device letters (2014).