Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random   Access Memory

doi:10.1109/LED.2013.2295378

CORC > 北京大学 > 软件与微电子学院

	Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
	Chu, Tian-Jian ; Tsai, Tsung-Ming ; Chang, Ting-Chang ; Chang, Kuan-Chang ; Zhang, Rui ; Chen, Kai-Huang ; Chen, Jung-Hui ; Young, Tai-Fa ; Huang, Jen-Wei ; Lou, Jen-Chung ; Chen, Min-Chen ; Huang, Syuan-Yong ; Chen, Hsin-Lu ; Syu, Yong-En ; Bao, Dinghua ; Sze, Simon M.
刊名	ieee electron device letters
	2014
关键词	RRAM hydrogen resistive switching tri-resistive states HOPPING CONDUCTION ORIGIN RRAM
DOI	10.1109/LED.2013.2295378
英文摘要	In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000331377500023&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 20; ARTICLE; tcchang@mail.phys.nsysu.edu.tw; 2; 217-219; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/216225]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Chu, Tian-Jian,Tsai, Tsung-Ming,Chang, Ting-Chang,et al. Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory[J]. ieee electron device letters,2014.
APA	Chu, Tian-Jian.,Tsai, Tsung-Ming.,Chang, Ting-Chang.,Chang, Kuan-Chang.,Zhang, Rui.,...&Sze, Simon M..(2014).Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory.ieee electron device letters.
MLA	Chu, Tian-Jian,et al."Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory".ieee electron device letters (2014).