Resistive Switching Modification by Ultraviolet Illumination in   Transparent Electrode Resistive Random Access Memory

doi:10.1109/LED.2014.2316673

CORC > 北京大学 > 软件与微电子学院

	Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory
	Shih, Chih-Cheng ; Chang, Kuan-Chang ; Chang, Ting-Chang ; Tsai, Tsung-Ming ; Zhang, Rui ; Chen, Jung-Hui ; Chen, Kai-Huang ; Young, Tai-Fa ; Chen, Hsin-Lu ; Lou, Jen-Chung ; Chu, Tian-Jian ; Huang, Syuan-Yong ; Bao, Ding-Hua ; Sze, Simon M.
刊名	ieee electron device letters
	2014
关键词	ZnO RRAM ultra-violet light current conduction mechanism IMPROVEMENT DEVICES
DOI	10.1109/LED.2014.2316673
英文摘要	Photosensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode was investigated and characterized in this paper. The resistive switching properties were affected severely through oxygen manipulation by UV light irradiation. To clarify the switching mechanism, conduction current fitting was applied and meanwhile a reaction model was proposed to explain the origin of drastic current variation. UV light-assisted oxygen manipulation in ZnO RRAM is an efficient method to modify device switching behavior, and this investigation also unveils the interesting phenomenon of transparent electrode RRAM under UV light illumination condition.; Engineering, Electrical & Electronic; SCI(E); EI; 4; ARTICLE; tcchang@mail.phys.nsysu.edu.tw; tmtsai@faculty.nsysu.edu.tw; 6; 633-635; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/212446]
专题	软件与微电子学院
推荐引用方式 GB/T 7714	Shih, Chih-Cheng,Chang, Kuan-Chang,Chang, Ting-Chang,et al. Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory[J]. ieee electron device letters,2014.
APA	Shih, Chih-Cheng.,Chang, Kuan-Chang.,Chang, Ting-Chang.,Tsai, Tsung-Ming.,Zhang, Rui.,...&Sze, Simon M..(2014).Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory.ieee electron device letters.
MLA	Shih, Chih-Cheng,et al."Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory".ieee electron device letters (2014).