CORC

浏览/检索结果: 共20条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET 期刊论文
2018, 卷号: 9
作者:  Yang, Zhaonian;  Yang, Yuan;  Yu, Ningmei;  Liou, Juin J.
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/20
Compact Model for Double-Gate Tunnel FETs With Gate-Drain Underlap 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248
作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining;  Yu, Zhonghua;  Lin, Xinnan
收藏  |  浏览/下载:7/0  |  提交时间:2019/11/15
Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High I-ON/I-OFF Ratio and Steep Swing 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhu, Jiadi; Zhao, Yang; Huang, Qianqian; Chen, Cheng; Wu, Chunlei; Jia, Rundong; Huang, Ru
收藏  |  浏览/下载:8/0  |  提交时间:2017/12/03
A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High I-ON/I-OFF Ratio 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhao, Yang; Wu, Chunlei; Huang, Qianqian; Chen, Cheng; Zhu, Jiadi; Guo, Lingyi; Jia, Rundong; Lv, Zhu; Yang, Yuchao; Li, Ming; Huang, Ru
收藏  |  浏览/下载:8/0  |  提交时间:2017/12/03
Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017
Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei
收藏  |  浏览/下载:6/0  |  提交时间:2017/12/03
Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate 期刊论文
2017, 卷号: 12, 页码: 198
作者:  Li, Wei;  Liu, Hongxia;  Wang, Shulong;  Chen, Shupeng;  Yang, Zhaonian
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/20
Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor 期刊论文
2017, 卷号: 111, 页码: 1226-1232
作者:  Yang, Zhaonian;  Zhang, Yue;  Yang, Yuan;  Yu, Ningmei
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/20
Tunnel Field-Effect Transistor With an L-Shaped Gate 期刊论文
2016, 卷号: 37, 页码: 839-842
作者:  Yang, Zhaonian
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/20
Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling 期刊论文
science china information sciences, 2015
Wang Chao; Wu ChunLei; Wang JiaXin; Huang QianQian; Huang Ru
收藏  |  浏览/下载:4/0  |  提交时间:2015/11/10
Study on the Ge1-xSnx/HfO2 interface and its impacts on Ge1-xSnx tunneling transistor 期刊论文
应用物理杂志, 2014
Qiu, Yingxin; Wang, Runsheng; Huang, Qianqian; Huang, Ru
收藏  |  浏览/下载:2/0  |  提交时间:2015/11/10


©版权所有 ©2017 CSpace - Powered by CSpace