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	Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate
	Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian
	2017
卷号	12页码:198
关键词	Band-to-band tunneling (BTBT) T-shaped gate Tunneling field-effect transistor (TFET) Heterojunction
ISSN号	1556-276X
DOI	10.1186/s11671-017-1958-3
URL标识	查看原文
WOS记录号	WOS:000397605200004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4978643
专题	西安理工大学
推荐引用方式 GB/T 7714	Li, Wei,Liu, Hongxia,Wang, Shulong,et al. Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate[J],2017,12:198.
APA	Li, Wei,Liu, Hongxia,Wang, Shulong,Chen, Shupeng,&Yang, Zhaonian.(2017).Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.,12,198.
MLA	Li, Wei,et al."Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate".12(2017):198.

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