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CORC

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Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure 期刊论文
THIN SOLID FILMS, 2022, 卷号: 762
作者:  Cheng, Wangping;  Li, Chenhui;  Zhou, Chen;  He, Yuandi;  Wei, Renhuai
收藏  |  浏览/下载：15/0  |  提交时间：2022/12/23
The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain 期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:  Lu, Xuefeng;  Li, Lingxia;  Guo, Xin;  Ren, Junqiang;  Xue, Hongtao
收藏  |  浏览/下载：18/0  |  提交时间：2022/08/09
Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS2Schottky Heterostructures 期刊论文
2022
作者:  X. Zhu;  J. He;  W. Liu;  Y. Zheng;  C. Sheng
收藏  |  浏览/下载：3/0  |  提交时间：2023/06/14
Finely dispersed and highly toluene sensitive NiO/NiGa2O4 heterostructures prepared from layered double hydroxides precursors 期刊论文
SENSORS AND ACTUATORS B-CHEMICAL, 2021, 卷号: 345, 页码: 9
作者:  Nie, Linfeng;  Fan, Guijun;  Wang, Anqi;  Zhang, Le;  Guan, Jian
收藏  |  浏览/下载：13/0  |  提交时间：2021/10/15
Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure 期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2021, 卷号: 198
作者:  Lu, Xuefeng;  Li, Lingxia;  Guo, Xin;  Ren, Junqiang;  Xue, Hongtao
收藏  |  浏览/下载：5/0  |  提交时间：2021/10/14
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field 期刊论文
Vacuum, 2021, 卷号: 188
作者:  Lu, Xuefeng;  Li, Lingxia;  Luo, Jianhua;  Guo, Xin;  Ren, Junqiang
收藏  |  浏览/下载：8/0  |  提交时间：2021/06/03
Unveiling Electrochemical Urea Synthesis by Co-Activation of CO2 and N-2 with Mott-Schottky Heterostructure Catalysts 期刊论文
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2021, 页码: 10
作者:  Yuan, Menglei;  Chen, Junwu;  Bai, Yiling;  Liu, Zhanjun;  Zhang, Jingxian
收藏  |  浏览/下载：35/0  |  提交时间：2021/08/31
Turning electronic performance and Schottky barrier of graphene/beta-Si3N4 (0001) heterostructure by external strain and electric field 期刊论文
VACUUM, 2021, 卷号: 188
作者:  Lu, Xuefeng;  Li, Lingxia;  Luo, Jianhua;  Guo, Xin;  Ren, Junqiang
收藏  |  浏览/下载：18/0  |  提交时间：2021/06/03
Computational understanding of the structural and electronic properties of the GeS-graphene contact 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2019, 卷号: 21, 期号: 14, 页码: 7447-7453
作者:  Zhao, Jinfeng;  Liang, Yan;  Chen, Hong;  Huang, Jindou
收藏  |  浏览/下载：53/0  |  提交时间：2019/06/20
Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts 期刊论文
ADVANCED SCIENCE, 2019, 卷号: 6, 期号: 11
作者:  Wang, Junjun;  Wang, Feng;  Wang, Zhenxing;  Cheng, Ruiqing;  Yin, Lei
收藏  |  浏览/下载：56/0  |  提交时间：2019/12/05

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