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	Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts
	Wang, Junjun; Wang, Feng; Wang, Zhenxing; Cheng, Ruiqing; Yin, Lei; Wen, Yao; Zhang, Yu; Li, Ningning; Zhan, Xueying; Xiao, Xiangheng
刊名	ADVANCED SCIENCE
	2019
卷号	6期号:11
关键词	ambipolar 2D semiconductors Fermi level pinning effect Schottky barrier substrate influence van der Waals heterostructures
DOI	10.1002/advs.201801841
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4215818
专题	武汉大学
推荐引用方式 GB/T 7714	Wang, Junjun,Wang, Feng,Wang, Zhenxing,et al. Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts[J]. ADVANCED SCIENCE,2019,6(11).
APA	Wang, Junjun.,Wang, Feng.,Wang, Zhenxing.,Cheng, Ruiqing.,Yin, Lei.,...&He, Jun.(2019).Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts.ADVANCED SCIENCE,6(11).
MLA	Wang, Junjun,et al."Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts".ADVANCED SCIENCE 6.11(2019).

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