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CORC

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Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga2O3 power diodes 期刊论文
APPLIED PHYSICS LETTERS, 2023, 卷号: 123
作者:  Liu, Jinyang;  Han, Zhao;  Ren, Lei;  Yang, Xiao;  Xu, Guangwei
收藏  |  浏览/下载：9/0  |  提交时间：2023/11/10
Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect 期刊论文
Nanoscale Advances, 2023, 卷号: 5, 期号: 9, 页码: 2530-2536
作者:  Y. Chen, K. Jiang, X. Sun, Z.-H. Zhang, S. Zhang, J. Ben, B. Wang, L. Guo and D. Li
收藏  |  浏览/下载：0/0  |  提交时间：2024/07/01
Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer 期刊论文
SMALL, 2022, 页码: 7
作者:  Wei, Yu-Ning;  Hu, Xian-Gang;  Zhang, Jian-Wei;  Tong, Bo;  Du, Jin-Hong
收藏  |  浏览/下载：37/0  |  提交时间：2022/07/14
Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer 期刊论文
Small, 2022, 卷号: 18, 期号: 24, 页码: 7
作者:  Y. N. Wei;  X. G. Hu;  J. W. Zhang;  B. Tong;  J. H. Du
收藏  |  浏览/下载：4/0  |  提交时间：2023/06/14
Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10
作者:  Huang, Mingmin;  Yang, Zhimei;  Wang, Shaomin;  Liu, Jiyuan;  Gong, Min
收藏  |  浏览/下载：30/0  |  提交时间：2021/12/15
High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment 期刊论文
AIP ADVANCES, 2019, 卷号: 9, 期号: 5
作者:  Liu, Zirui;  Wang, Jianfeng;  Gu, Hong;  Zhang, Yumin;  Wang, Weifan
收藏  |  浏览/下载：117/0  |  提交时间：2019/12/26
Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations 期刊论文
DIAMOND AND RELATED MATERIALS, 2019, 卷号: 92, 页码: 146-149
作者:  Yu, Xinxin;  Zhou, Jianjun;  Wang, Yanfeng;  Qiu, Feng;  Kong, Yuechan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/19
Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3 期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28
作者:  Yang, Chao;  Liang, Hongwei;  Zhang, Zhenzhong;  Xia, Xiaochuan;  Zhang, Heqiu
收藏  |  浏览/下载：17/0  |  提交时间：2019/12/02
High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 3, 页码: 451-454
作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Mu, Wenxiang
收藏  |  浏览/下载：16/0  |  提交时间：2019/12/11
High-performance quasi-vertical GaN Schottky diode with low turn-on voltage. 期刊论文
Superlattices & Microstructures, 2019, 卷号: Vol.125, 页码: 295-301
作者:  Bian, Zhao-Ke;  Zhou, Hong;  Xu, Sheng-Rui;  Zhang, Tao;  Dang, Kui
收藏  |  浏览/下载：25/0  |  提交时间：2019/12/17

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