| Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations | |
| Yu, Xinxin; Zhou, Jianjun; Wang, Yanfeng; Qiu, Feng; Kong, Yuechan; Wang, Hongxing; Chen, Tangsheng | |
| 刊名 | DIAMOND AND RELATED MATERIALS
 |
| 2019 | |
| 卷号 | 92页码:146-149 |
| 关键词 | Diamond Boron implant Schottky diode Edge termination |
| ISSN号 | 0925-9635 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2826768 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Yu, Xinxin,Zhou, Jianjun,Wang, Yanfeng,et al. Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations[J]. DIAMOND AND RELATED MATERIALS,2019,92:146-149. |
| APA | Yu, Xinxin.,Zhou, Jianjun.,Wang, Yanfeng.,Qiu, Feng.,Kong, Yuechan.,...&Chen, Tangsheng.(2019).Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations.DIAMOND AND RELATED MATERIALS,92,146-149. |
| MLA | Yu, Xinxin,et al."Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations".DIAMOND AND RELATED MATERIALS 92(2019):146-149. |
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