High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

doi:10.1063/1.5100251

	High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
	Liu, Zirui; Wang, Jianfeng; Gu, Hong; Zhang, Yumin; Wang, Weifan; Xiong, Rui; Xu, Ke
刊名	AIP ADVANCES
	2019-05-01
卷号	9 期号:5
ISSN号	2158-3226
DOI	10.1063/1.5100251
文献子类	Article
英文摘要	This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and significantly reduced the reverse leakage current by 105 times. These results indicate that the F-implanted SBD showed improved reverse capability. In addition, a high I-on/I-off ratio of 10(8) and high Schottky barrier height of 0.92 eV were also achieved for this diode with F implantation. The influence of F ion implantation in this SBD was also discussed in detail. It was found that F ion implantation to GaN could not only create a high-resistant region as effective edge termination but be employed for adjusting the carrier density of the surface of GaN, which were both helpful to achieve high breakdown voltage and suppress reverse leakage current. This work shows the potential for fabricating high-voltage and low-leakage SBDs using F ion implantation treatment. (c)) 2019 Author(s).
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	AMER INST PHYSICS
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/27129]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Liu, Zirui,Wang, Jianfeng,Gu, Hong,et al. High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment[J]. AIP ADVANCES,2019,9(5).
APA	Liu, Zirui.,Wang, Jianfeng.,Gu, Hong.,Zhang, Yumin.,Wang, Weifan.,...&Xu, Ke.(2019).High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment.AIP ADVANCES,9(5).
MLA	Liu, Zirui,et al."High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment".AIP ADVANCES 9.5(2019).