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A low-power high-speed driving circuit for spatial light modulators
期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 2, 页码: 025013
作者:
Wenjiang Li (李文江)
;
Yaohui Zhang (张耀辉)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/01/14
spatial light modulator
driving circuit
high speed
low power
Novel strip EAM with a ring resonator on InP/InGaAsP-MQW
会议论文
作者:
Zhou, Zheng
;
Cai, Chun
;
Sun, Xiao-Han
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2020/11/15
Electroabsorption modulators
Etching
Gallium compounds
III-V semiconductors
Indium phosphide
Microwave resonators
Optical communication
Optical communication equipment
Optical resonators
Photonic integration technology
Resonators
Semiconducting indium phosphide
3D FDTD
Electric absorption
Environmental factors
Functional devices
Photonic microwave
Substrate material
Terminal equipment
Time-domain methods
Optimization of multiple quantum well electroabsorption modulators based on transmission performance simulation
期刊论文
2010, 2010
Xiong, Bing
;
Sun, Changzheng
;
Luo, Yi
收藏
  |  
浏览/下载:4/0
Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y
会议论文
conference on optoelectronic materials and devices ii, wuhan, peoples r china, nov 02-05, 2007
作者:
Pan JQ
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  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
butt joint
Tandem electroabsorption modulators integrated with dfb laser by ultra-low-pressure selective-area-growth mocvd for 10 ghz optical short pulse generation
期刊论文
Semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885
作者:
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhou, GT
;
Wu, J
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation
期刊论文
semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhou, GT
;
Wu, J
;
Wang, LF
;
Wang, W
收藏
  |  
浏览/下载:115/47
  |  
提交时间:2010/03/17
摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA
output light power of 4.5 mW
and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover
over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device
10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.
Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials
期刊论文
PHYSICAL REVIEW B, 2001, 卷号: 63, 期号: 11
Zhang, MH
;
Guo, LW
;
Li, HW
;
Li, W
;
Huang, Q
;
Bao, CL
;
Zhou, JM
;
Liu, BL
;
Xu, ZY
;
Zhang, YH
;
Lu, LW
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  |  
浏览/下载:13/0
  |  
提交时间:2013/09/17
BEAM-EPITAXIAL GAAS
SPATIAL LIGHT MODULATORS
MULTIPLE-QUANTUM WELLS
Strained MQW electro-absorption modulators with high extinction ratio and low capacitance
会议论文
13th international conference on indium phosphide and related materials (iprm), nara, japan, may 14-18, 2001
Sun Y
;
Wang W
;
Chen WX
;
Liu GL
;
Zhou F
;
Zhu HL
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  |  
浏览/下载:7/0
  |  
提交时间:2010/10/29
ELECTROABSORPTION
Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials
期刊论文
physical review b, 2001, 卷号: 63, 期号: 11, 页码: art.no.115324
Zhang MH
;
Guo LW
;
Li HW
;
Li W
;
Huang Q
;
Bao CL
;
Zhou JM
;
Liu BL
;
Xu ZY
;
Zhang YH
;
Lu LW
收藏
  |  
浏览/下载:96/7
  |  
提交时间:2010/08/12
BEAM-EPITAXIAL GAAS
SPATIAL LIGHT MODULATORS
MULTIPLE-QUANTUM WELLS
Flip-chip bonded hybrid cmos/seed optoelectronic smart pixels
期刊论文
Iee proceedings-optoelectronics, 2000, 卷号: 147, 期号: 1, 页码: 2-6
作者:
Chen, HD
;
Liang, K
;
Zeng, QM
;
Li, XJ
;
Chen, ZB
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/05/12
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