Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation
	Zhao, Q ; Pan, JQ ; Zhang, J ; Zhou, GT ; Wu, J ; Wang, LF ; Wang, W
刊名	semiconductor science and technology
	2005
卷号	20 期号:8 页码:882-885
关键词	摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA output light power of 4.5 mW and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.
ISSN号	0268-1242
通讯作者	zhao, q, chinese acad sci, inst semicond, natl res ctr optoelect technol, pob 912, beijing 100083, peoples r china. 电子邮箱地址: qzhao@red.semi.ac.cn
中文摘要
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8540]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao, Q,Pan, JQ,Zhang, J,et al. Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation[J]. semiconductor science and technology,2005,20(8):882-885.
APA	Zhao, Q.,Pan, JQ.,Zhang, J.,Zhou, GT.,Wu, J.,...&Wang, W.(2005).Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation.semiconductor science and technology,20(8),882-885.
MLA	Zhao, Q,et al."Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation".semiconductor science and technology 20.8(2005):882-885.