Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

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	Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials
	Zhang MH ; Guo LW ; Li HW ; Li W ; Huang Q ; Bao CL ; Zhou JM ; Liu BL ; Xu ZY ; Zhang YH ; Lu LW
刊名	physical review b
	2001
卷号	63 期号:11 页码:art.no.115324
关键词	BEAM-EPITAXIAL GAAS SPATIAL LIGHT MODULATORS MULTIPLE-QUANTUM WELLS
ISSN号	1098-0121
通讯作者	zhang mh,chinese acad sci,inst phys,ctr condensed matter phys,pob 603,beijing 100080,peoples r china.
中文摘要	infrared absorption spectroscopy, optical transient current spectroscopy (otcs), and photoluminescence (pl) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (lt)-grown gaas-related materials. two lt samples of bulk gaas (sample a) and gaas/alxga1-xas multiple-quantum-well. (mqw) structure (sample b) were grown at 220 and 320 degreesc on (001) gaas substrates, respectively. a strong defect-related absorption band has been observed in both as-grown samples a and b. it becomes weaker in samples annealed at temperatures above 600 degreesc. in sample a, annealed in the range of 600-800 degreesc, a large negative decay signal of the optical transient current (otc) is observed in a certain range of temperature, which distorts deep-level spectra measured by otcs, making it difficult to identify any deep levels. at annealing temperatures of 600 and 700 degreesc, both as-ga antisite and small as cluster-related deep levels are identified in sample b. it is found that compared to the as cluster, the as-ga antisite has a larger activation energy and carrier capture rate. at an annealing temperature of 800 degreesc, the large negative decay signal of the otc is also observed in sample b. it is argued that this negative decay signal of the otc is related to large arsenic clusters. for sample b, transient pl spectra have also been measured to study the influence of the, defect evolution on optical properties of lt gaas/alxga1-xas mqw structures. our results clearly identify a defect evolution from as(ga) antisites to arsenic clusters after annealing.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12256]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang MH,Guo LW,Li HW,et al. Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials[J]. physical review b,2001,63(11):art.no.115324.
APA	Zhang MH.,Guo LW.,Li HW.,Li W.,Huang Q.,...&Lu LW.(2001).Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials.physical review b,63(11),art.no.115324.
MLA	Zhang MH,et al."Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials".physical review b 63.11(2001):art.no.115324.