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Tandem electroabsorption modulators integrated with dfb laser by ultra-low-pressure selective-area-growth mocvd for 10 ghz optical short pulse generation
Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W
刊名Semiconductor science and technology
2005-08-01
卷号20期号:8页码:882-885
ISSN号0268-1242
DOI10.1088/0268-1242/20/8/045
通讯作者Zhao, q(qzhao@red.semi.ac.cn)
英文摘要A novel device of tandem mqw eams monolithically integrated with a dfb laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth mocvd technique. experimental results exhibit superior device characteristics with low threshold of 19 ma, output light power of 4.5 mw, and over 20 db extinction ratio when coupled to a single mode fibre. moreover, over 10 ghz modulation bandwidth is developed with a driving voltage of 2 v. using this sinusoidal voltage driven integrated device, 10 ghz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.
WOS研究方向Engineering ; Materials Science ; Physics
WOS类目Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000231674100049
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2426301
专题半导体研究所
通讯作者Zhao, Q
作者单位1.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
2.Beijing Univ Posts & Telecommun, Minist Educ, Key Lab Opt Commun & Lightwave Technol, Beijing 100876, Peoples R China
推荐引用方式
GB/T 7714
Zhao, Q,Pan, JQ,Zhang, J,et al. Tandem electroabsorption modulators integrated with dfb laser by ultra-low-pressure selective-area-growth mocvd for 10 ghz optical short pulse generation[J]. Semiconductor science and technology,2005,20(8):882-885.
APA Zhao, Q.,Pan, JQ.,Zhang, J.,Zhou, GT.,Wu, J.,...&Wang, W.(2005).Tandem electroabsorption modulators integrated with dfb laser by ultra-low-pressure selective-area-growth mocvd for 10 ghz optical short pulse generation.Semiconductor science and technology,20(8),882-885.
MLA Zhao, Q,et al."Tandem electroabsorption modulators integrated with dfb laser by ultra-low-pressure selective-area-growth mocvd for 10 ghz optical short pulse generation".Semiconductor science and technology 20.8(2005):882-885.
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