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兰州大学 [4]
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会议论文 [4]
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2013 [1]
2012 [2]
2011 [1]
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atomic and... [1]
atomic and... [1]
classical ... [1]
materials ... [1]
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Atomic diffusion and interface reaction of Cu/Si (111) films prepared by ionized cluster beam deposition
会议论文
17th International Conference on Surface Modification of Materials by Ion Beams (SMMIB), Harbin, PEOPLES R CHINA, SEP 13-17, 2011
作者:
Cao, B
;
Yang, TR
;
Li, GP
;
Cho, S
;
Kim, H
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/01/20
Interdiffusion
Interface reaction
Copper silicides
RBS
XRD
Surface morphology and roughness of Cu thin films prepared by ionized cluster beam deposition
会议论文
2012 International Conference on Frontiers of Advanced Materials and Engineering Technology, FAMET 2012, Xiamen, China, January 4, 2012 - January 5, 2012
作者:
Cao, Bo
;
Yang, Tongrui
;
Li, Gongping
;
Cho, Seong Jin
;
Kim, Hee
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/01/20
Surface morphology
Atomic force microscopy
Chemical modification
Copper
Deposition
Engineering technology
Ionization
Ions
Morphology
Semiconducting silicon compounds
Surface roughness
Surfaces
Thin films
Vapor deposition
Acceleration voltages
Average grain size
Cu Films
Cu thin film
Deposition conditions
Ionized cluster beam deposition
Ionized cluster beams
P-type Si
XPS spectra of cu thin films prepared by ionized cluster beam deposition
会议论文
2nd International Symposium on Chemical Engineering and Material Properties, ISCEMP 2012, Taiyuan, Shanxi, China, June 22, 2012 - June 24, 2012
作者:
Cao, Bo
;
Yang, Tongrui
;
Li, Gongping
;
Cho, Seongjin
;
Kim, Hee
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/01/20
X ray photoelectron spectroscopy
Atoms
Binding energy
Chemical engineering
Chemical modification
Deposits
Ions
Photoelectrons
Silicon
Surface properties
Thin films
Vapor deposition
Atomic binding
Bulk materials
Copper films
Cu thin film
Ionized cluster beam deposition
Ionized cluster beams
Local energy
Neutral clusters
P-type Si
XPS spectra
Thermal stability of Cu/Si (111) films prepared by ionized cluster beam technique
会议论文
2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011, Sanya, China, July 29, 2011 - July 31, 2011
作者:
Cao, Bo
;
Jia, Yanhui
;
Li, Gongping
;
Cho, Seong Jin
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/01/20
Film preparation
Annealing
Backscattering
Copper
Diffraction
Diffusion
Ionization
Ions
Metallic films
Rutherford backscattering spectroscopy
Silicides
Silicon
Spectrometry
Thermodynamic stability
X ray diffraction
Annealing temperatures
Atomic diffusions
Cu films
Interface reaction
Interface reactions
Ionized cluster beam (ICB)
Ionized cluster beams
P-type Si
Rutherford backscattering spectrometry
Rutherford backscattering spectrometry (RBS)
Si atoms
Si substrates
Thermally stable
X-ray diffraction (XRD)
XRD
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