Thermal stability of Cu/Si (111) films prepared by ionized cluster beam technique

	Thermal stability of Cu/Si (111) films prepared by ionized cluster beam technique
	Cao, Bo; Jia, Yanhui; Li, Gongping; Cho, Seong Jin; Kim, Hee
	2011
会议名称	2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011
会议日期	July 29, 2011 - July 31, 2011
会议地点	Sanya, China
关键词	Film preparation Annealing Backscattering Copper Diffraction Diffusion Ionization Ions Metallic films Rutherford backscattering spectroscopy Silicides Silicon Spectrometry Thermodynamic stability X ray diffraction Annealing temperatures Atomic diffusions Cu films Interface reaction Interface reactions Ionized cluster beam (ICB) Ionized cluster beams P-type Si Rutherford backscattering spectrometry Rutherford backscattering spectrometry (RBS) Si atoms Si substrates Thermally stable X-ray diffraction (XRD) XRD
卷号	287-290
页码	2369-2372
通讯作者	Cao, B. (caobo@ncepu.edu.cn)
会议录	Advanced Materials Research
会议录出版地	Clausthal-Zellerfeld
学科主题	Atomic and Molecular Physics; Chemistry;Chemical Reactions; Chemical Products Generally;Mechanics;Electromagnetic Waves in Different Media;Thermodynamics; Metals Corrosion and Protection; Metal Plating
语种	英语
ISSN号	1022-6680
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/184908]
专题	核科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Cao, Bo,Jia, Yanhui,Li, Gongping,et al. Thermal stability of Cu/Si (111) films prepared by ionized cluster beam technique[C]. 见:2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011. Sanya, China. July 29, 2011 - July 31, 2011.