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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2017     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Material removal model of ultrasonic elliptical vibration-assisted chemical mechanical polishing for hard and brittle materials 期刊论文 International Journal of Advanced Manufacturing Technology, 2017, 卷号: 92, 期号: 1-4, 页码: 81-99 作者:  Liu, Defu*;  Yan, Riming;  Chen, Tao 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/03 Ultrasonic elliptical vibration (UEV)  Chemical mechanical polishing (CMP)  Material removal rate (MRR)  Hard and brittle materials   Chemical-mechanical wear of monocrystalline silicon by a single pad asperity 期刊论文 INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2017, 卷号: 120, 页码: 61-71 作者:  Wang, Lin;  Zhou, Ping;  Yan, Ying;  Zhang, Bi;  Kang, Renke 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/02 Chemical-mechanical polishing  Pad asperity  Removal mechanism  Chemical bonds   Design of an ultra-precision CNC chemical mechanical polishing machine and its implementation 会议论文 作者:  Zhang, Chupeng;  Zhao, Huiying;  Gu, Yawen;  Ban, Xinxing;  Jiang, Chunye 收藏  |  浏览/下载：8/0  |  提交时间：2019/11/26 Chemical mechanical polishing  Tin plate  Gas hydrostatic rotary table  Ultra-precision machine tool  Design principle  Diamond tool dressing  Kinematic errors  Gas hydrostatic linear guideway   Material removal mechanism of copper chemical mechanical polishing with different particle sizes based on quasi-continuum method 期刊论文 FRICTION, 2017, 卷号: 5, 页码: 99-107 作者:  Zhu, Aibin;  He, Dayong;  He, Shengli;  Luo, Wencheng 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26 particle size  chemical mechanical polishing  material removal mechanism  quasi-continuum  single crystal copper   Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire 期刊论文 FRICTION, 2017, 卷号: 5, 页码: 429-436 作者:  Zhang, Baichun[1];  Lei, Hong[2];  Chen, Yi[3] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 chemical mechanical polishing  Ag-doped colloidal silica abrasive  sapphire  material removal rate   CMP behavior of alumina/metatitanic acid core-shell abrasives on sapphire substrates 期刊论文 PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2017, 卷号: 50, 页码: 263-268 作者:  Wang, Xin[1];  Lei, Hong[2];  Chen, Ruling[3] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24 Chemical mechanical polishing (CMP)  alpha-Al2O3/TiO(OH)(2) core-shell abrasives  Sapphire  Mechanism   Model quality evaluation in semiconductor manufacturing process with EWMA run-to-run control (EI收录) 期刊论文 IEEE Transactions on Semiconductor Manufacturing, 2017, 卷号: 30, 页码: 8-16 作者:  Zheng, Ying[1];  Ling, Dan[1];  Wang, Yan-Wei[2];  Jang, Shi-Shang[3];  Tao, Bo[4] 收藏  |  浏览/下载：10/0  |  提交时间：2019/04/24 Chemical mechanical polishing  Chemical polishing  Controllers  Least squares approximations  Manufacture  Quality control  Semiconductor device manufacture  White noise   Nd3+-doped colloidal SiO2 composite abrasives: Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers 期刊论文 APPLIED SURFACE SCIENCE, 2017, 卷号: 413, 页码: 16-26 作者:  Liu, Tingting[1];  Lei, Hong[2] 收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24 Nd3+-doped colloidal SiO2 composite abrasives  Chemical mechanical polishing (CMP)  Sapphire  Material removal rate (MRR)