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HEADLESS Regulates Auxin Response and Compound Leaf Morphogenesis in Medicago truncatula 期刊论文
FRONTIERS IN PLANT SCIENCE, 2019, 卷号: 10
作者:  Wang, Hongfeng;  Xu, Yiteng;  Hong, Limei;  Zhang, Xue;  Wang, Xiao
收藏  |  浏览/下载:36/0  |  提交时间:2019/12/11
Seasonal Distribution of Suspended Particulate Matter off China's Subei Coast 期刊论文
POLISH JOURNAL OF ENVIRONMENTAL STUDIES, 2018, 卷号: 27, 期号: 2, 页码: 845-852
作者:  Song, Zhaojun;  Li, Jianping;  Meng, Fanxue;  Tang, Wenjia;  Yuan, Xingyu
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/11
Mesozoic high-Mg andesites from the Daohugou area, Inner Mongolia: Upper-crustal fractional crystallization of parental melt derived from metasomatized lithospheric mantle wedge 期刊论文
LITHOS, 2018, 卷号: 302, 页码: 535-548
作者:  Meng, Fanxue;  Gao, Shan;  Song, Zhaojun;  Niu, Yaoling;  Li, Xuping
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/11
Dating of zircon LA-MC-ICP-MS U-Pb in metabasalt of zhaertai group, Inner Mongolia, China 期刊论文
INDIAN JOURNAL OF GEO-MARINE SCIENCES, 2017, 卷号: 46, 期号: 10, 页码: 1950-1958
作者:  Song, Zhaojun;  Meng, Fanxue;  Li, Haifeng;  Yuan, Xinyu;  Li, Xuping
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/11
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Applied physics letters, 2012, 期号: 11, 页码: 113501-1-113501-4
作者:  Chongbiao Luan;  Zhaojun Lin;  Yuanjie Lv;  Lingguo Meng;  Yingxia Yu
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/23
Polarization Coulomb field scattering in In_(0.18)Al_(0.82)N/AlN/GaN heterostructure field-effect transistors 期刊论文
Journal of Applied Physics, 2012, 期号: 5, 页码: 054513-1-054513-5
作者:  Chongbiao Luan;  Zhaojun Lin;  Zhihong Feng;  Lingguo Meng;  Yuanjie Lv
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/23
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11
作者:  Luan, Chongbiao;  Lin, Zhaojun;  Lv, Yuanjie;  Meng, Lingguo;  Yu, Yingxia
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/23
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5
作者:  Luan, Chongbiao;  Lin, Zhaojun;  Feng, Zhihong;  Meng, Lingguo;  Lv, Yuanjie
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/23
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7
作者:  Lv, Yuanjie;  Lin, Zhaojun;  Meng, Lingguo;  Luan, Chongbiao;  Cao, Zhifang
收藏  |  浏览/下载:1/0  |  提交时间:2019/12/23
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 会议论文
作者:  Luan, Chongbiao;  Lin, Zhaojun;  Feng, Zhihong;  Meng, Lingguo;  Lv, Yuanjie
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/31


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