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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo
刊名JOURNAL OF APPLIED PHYSICS
2012
卷号112期号:5
DOI10.1063/1.4752254
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5190343
专题山东大学
作者单位1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
2.[Fen
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GB/T 7714
Luan, Chongbiao,Lin, Zhaojun,Feng, Zhihong,et al. Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors[J]. JOURNAL OF APPLIED PHYSICS,2012,112(5).
APA Luan, Chongbiao.,Lin, Zhaojun.,Feng, Zhihong.,Meng, Lingguo.,Lv, Yuanjie.,...&Wang, Zhanguo.(2012).Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors.JOURNAL OF APPLIED PHYSICS,112(5).
MLA Luan, Chongbiao,et al."Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors".JOURNAL OF APPLIED PHYSICS 112.5(2012).
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