Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors | |
Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo | |
刊名 | JOURNAL OF APPLIED PHYSICS |
2012 | |
卷号 | 112期号:5 |
DOI | 10.1063/1.4752254 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5190343 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. 2.[Fen |
推荐引用方式 GB/T 7714 | Luan, Chongbiao,Lin, Zhaojun,Feng, Zhihong,et al. Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors[J]. JOURNAL OF APPLIED PHYSICS,2012,112(5). |
APA | Luan, Chongbiao.,Lin, Zhaojun.,Feng, Zhihong.,Meng, Lingguo.,Lv, Yuanjie.,...&Wang, Zhanguo.(2012).Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors.JOURNAL OF APPLIED PHYSICS,112(5). |
MLA | Luan, Chongbiao,et al."Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors".JOURNAL OF APPLIED PHYSICS 112.5(2012). |
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