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	Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
	Lv, Yuanjie; Lin, Zhaojun; Meng, Lingguo; Luan, Chongbiao; Cao, Zhifang; Yu, Yingxia; Feng, Zhihong; Wang, Zhanguo
刊名	NANOSCALE RESEARCH LETTERS
	2012
卷号	7
关键词	electron mobility drain-to-source distance AlGaN/GaN heterostructures polarization Coulomb field scattering
DOI	10.1186/1556-276X-7-434
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5189933
专题	山东大学
作者单位	1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. 2.[Fen
推荐引用方式 GB/T 7714	Lv, Yuanjie,Lin, Zhaojun,Meng, Lingguo,et al. Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. NANOSCALE RESEARCH LETTERS,2012,7.
APA	Lv, Yuanjie.,Lin, Zhaojun.,Meng, Lingguo.,Luan, Chongbiao.,Cao, Zhifang.,...&Wang, Zhanguo.(2012).Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors.NANOSCALE RESEARCH LETTERS,7.
MLA	Lv, Yuanjie,et al."Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors".NANOSCALE RESEARCH LETTERS 7(2012).

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