QQ客服 官方微博 反馈留言

	Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
	Chongbiao Luan; Zhaojun Lin; Yuanjie Lv; Lingguo Meng; Yingxia Yu; Zhifang Cao; Hong Chen; Zhanguo Wang
刊名	Applied physics letters
	2012
期号	11页码:113501-1-113501-4
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5185334
专题	山东大学
作者单位	1.School of Physics, Shandong University, Jinan 250100, China 2.School of Physics, Shandong University, Jinan 250100, China 3.School o
推荐引用方式 GB/T 7714	Chongbiao Luan,Zhaojun Lin,Yuanjie Lv,et al. Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. Applied physics letters,2012(11):113501-1-113501-4.
APA	Chongbiao Luan.,Zhaojun Lin.,Yuanjie Lv.,Lingguo Meng.,Yingxia Yu.,...&Zhanguo Wang.(2012).Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.Applied physics letters(11),113501-1-113501-4.
MLA	Chongbiao Luan,et al."Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".Applied physics letters .11(2012):113501-1-113501-4.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。