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浏览/检索结果: 共20条，第1-10条 帮助 限定条件 内容类型：期刊论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516 Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A 收藏  |  浏览/下载：78/0  |  提交时间：2010/03/08 STRESS  SI(111)  REDUCTION  THICKNESS   Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012104 Zhang, PF; Liu, XL; Zhang, RQ; Fan, HB; Yang, AL; Wei, HY; Jin, P; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：62/2  |  提交时间：2010/03/08 Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101 Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.) 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/29 LIGHT-EMITTING-DIODES   Lateral phase separation in algan grown on gan with a high-temperature ain interlayer 期刊论文 Applied physics letters, 2005, 卷号: 87, 期号: 12, 页码: 3 作者:  Sun, Q;  Huang, Y;  Wang, H;  Chen, J;  Jin, RQ 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Depth dependent elastic strain in zno epilayer: combined rutherford backscattering/channeling and x-ray diffraction 期刊论文 Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2005, 卷号: 229, 期号: 2, 页码: 246-252 作者:  Feng, ZX;  Yao, SD;  Hou, L;  Jin, RQ 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Rutherford backscattering/channeling  Elastic strain  Tetragonal distortion  Lattice mismatich   Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 7, 页码: art.no.071908 作者:  Jiang DS;  Zhang JC;  Yang H;  Zhang JC;  Zhang JC 收藏  |  浏览/下载：65/14  |  提交时间：2010/03/17 X-RAY-DIFFRACTION   Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 12, 页码: art.no.121914 作者:  Yang H;  Yang H;  Wang H;  Jiang DS;  Zhang SM 收藏  |  浏览/下载：110/19  |  提交时间：2010/03/17 CHEMICAL-VAPOR-DEPOSITION   Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction 期刊论文 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2005, 卷号: 229, 期号: 2, 页码: 246-252 Feng ZX; Yao SD; Hou L; Jin RQ 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/17 rutherford backscattering/channeling   A study of the degree of relaxation of algan epilayers on gan template 期刊论文 Journal of crystal growth, 2004, 卷号: 270, 期号: 3-4, 页码: 289-294 作者:  Zhang, JC;  Wu, MF;  Wang, JF;  Liu, JP;  Wang, YT 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 High resolution x-ray diffraction  Rutherford backscattering/channeling  Metalorganic chemical vapor deposition  Nitrides  Semiconducting gallium compounds   Indium mole fraction effect on the structural and optical properties of quaternary alingan epilayers 期刊论文 Journal of physics d-applied physics, 2004, 卷号: 37, 期号: 15, 页码: 2060-2063 作者:  Liu, JP;  Jin, RQ;  Zhang, JC;  Wang, JF;  Wu, M 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12