Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer

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	Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer
	Yang H; Yang H; Wang H; Jiang DS; Zhang SM; Wang H
刊名	applied physics letters
	2005
卷号	87 期号:12 页码:art.no.121914
关键词	CHEMICAL-VAPOR-DEPOSITION
ISSN号	0003-6951
通讯作者	sun, q, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: qsun@red.semi.ac.cn
中文摘要	the influences of a high-temperature (ht) aln interlayer (il) on the phase separation in crack-free algan grown on gan have been studied. the depth-dependent cathodoluminescence (cl) spectra indicate a relatively uniform al distribution in the growth direction, but the monochromatic cl images and the cl spectra obtained by line scan measurements reveal a lateral phase separation in algan grown on relatively thick ht-aln ils. moreover, when increasing the thickness of ht-aln il, the domain-like distribution of the aln mole fraction in algan layers is significantly enhanced through a great reduction of the domain size. the morphology of mesa-like small islands separated by v trenches in the ht-aln il, and the grain template formed by the coalescence of these islands during the subsequent algan lateral overgrowth, are attributed to be responsible for the formation of domain-like structures in the algan layer. (c) 2005 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8530]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Yang H,Wang H,et al. Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer[J]. applied physics letters,2005,87(12):art.no.121914.
APA	Yang H,Yang H,Wang H,Jiang DS,Zhang SM,&Wang H.(2005).Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer.applied physics letters,87(12),art.no.121914.
MLA	Yang H,et al."Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer".applied physics letters 87.12(2005):art.no.121914.