Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy

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	Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy
	Zhang, PF ; Liu, XL ; Zhang, RQ ; Fan, HB ; Yang, AL ; Wei, HY ; Jin, P ; Yang, SY ; Zhu, QS ; Wang, ZG
刊名	applied physics letters
	2008
卷号	92 期号:1 页码:art. no. 012104
ISSN号	0003-6951
通讯作者	zhang, pf, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhangpanf@semi.ac.cn ; xlliu@semi.ac.cn
中文摘要	x-ray photoelectron spectroscopy has been used to measure the valence band offset at the zno/gaas heterojunction interface. the valence band offset is determined to be 2.39 +/- 0.23 ev. as a consequence, a type-ii heterojunction with a conduction band offset of -0.44 +/- 0.23 ev is found. the directly obtained value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. (c) 2008 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6910]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang, PF,Liu, XL,Zhang, RQ,et al. Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy[J]. applied physics letters,2008,92(1):art. no. 012104.
APA	Zhang, PF.,Liu, XL.,Zhang, RQ.,Fan, HB.,Yang, AL.,...&Wang, ZG.(2008).Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy.applied physics letters,92(1),art. no. 012104.
MLA	Zhang, PF,et al."Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy".applied physics letters 92.1(2008):art. no. 012104.