Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy | |
Zhang, PF ; Liu, XL ; Zhang, RQ ; Fan, HB ; Yang, AL ; Wei, HY ; Jin, P ; Yang, SY ; Zhu, QS ; Wang, ZG | |
刊名 | applied physics letters
![]() |
2008 | |
卷号 | 92期号:1页码:art. no. 012104 |
ISSN号 | 0003-6951 |
通讯作者 | zhang, pf, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhangpanf@semi.ac.cn ; xlliu@semi.ac.cn |
中文摘要 | x-ray photoelectron spectroscopy has been used to measure the valence band offset at the zno/gaas heterojunction interface. the valence band offset is determined to be 2.39 +/- 0.23 ev. as a consequence, a type-ii heterojunction with a conduction band offset of -0.44 +/- 0.23 ev is found. the directly obtained value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. (c) 2008 american institute of physics. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/6910] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhang, PF,Liu, XL,Zhang, RQ,et al. Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy[J]. applied physics letters,2008,92(1):art. no. 012104. |
APA | Zhang, PF.,Liu, XL.,Zhang, RQ.,Fan, HB.,Yang, AL.,...&Wang, ZG.(2008).Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy.applied physics letters,92(1),art. no. 012104. |
MLA | Zhang, PF,et al."Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy".applied physics letters 92.1(2008):art. no. 012104. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论