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| Correlation analysis between the current fluctuation characteristics and the conductivefilament morphology of HfO2-based memristor 期刊论文 APPLIED PHYSICS LETTERS, 2017 作者: Zhang MY(张美芸); Long SB(龙世兵) ; Liu M(刘明)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2018/07/12 |
| Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator 期刊论文 SCIeNTIfIC REporTS, 2017 作者: Li Y(李昱); Zhang MY(张美芸); Long SB(龙世兵) ; Liu Q(刘琦) ; Lv HB(吕杭炳)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2018/07/13 |
| Anisotropic Magnetoresistance of Nanoconductive Filament in Co/HfO2/Pt Resistive Switching Memory 期刊论文 Nanoscale Research Letters, 2017 作者: Liu Q(刘琦) ; Liu M(刘明) ; Lv HB(吕杭炳) ; Zhang MY(张美芸); Long SB(龙世兵)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:9/0  |  提交时间:2018/07/12 |
| A cell-based clustering model for the reset statistics in RRAM 期刊论文 APPLIED PHYSICS LETTERS, 2017 作者: Sun H(孙浩); Zhang MY(张美芸); Li Y(李昱); Long SB(龙世兵) ; Liu Q(刘琦)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2018/07/13 |
| Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown 期刊论文 Applied Physics Letters, 2016 作者: Zhang MY(张美芸); Long SB(龙世兵)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:5/0  |  提交时间:2017/05/11 |
| A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method 期刊论文 IEEE Electron Device Letters, 2015 作者: Zhang MY(张美芸); Yu ZA(余兆安) ; Li Y(李阳) ; Xu DL(许定林); Lv HB(吕杭炳)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:18/0  |  提交时间:2016/05/24 |
| Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation 期刊论文 Appl. Phys. Lett., 2015 作者: Xu DL(许定林); Wang GM(王国明); Long SB(龙世兵) ; Yu ZA(余兆安) ; Zhang MY(张美芸)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2016/05/24 |
| Investigation of LRS dependence on the retention of HRS in CBRAM 期刊论文 Nanoscale Research Letters, 2015 作者: Lv HB(吕杭炳) ; Xu XX(许晓欣) ; Liu HT(刘红涛); Luo Q(罗庆) ; Gong TC(龚天成)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:8/0  |  提交时间:2016/05/24 |
| Impact of program/erase operation on the performances of oxide-based resistive switching memory 期刊论文 Nanoscale Research Letters, 2015 作者: Wang GM(王国明); Long SB(龙世兵) ; Yu ZA(余兆安) ; Zhang MY(张美芸); Li Y(李阳)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:9/0  |  提交时间:2016/05/24 |
| Set statistics in conductive bridge random access memory device 期刊论文 Applied Physics Letters, 2014 作者: Li Y(李阳) ; Liu Q(刘琦) ; Lv HB(吕杭炳) ; Xu XX(许晓欣) ; Liu M(刘明)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:17/0  |  提交时间:2015/04/14 |