Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

	Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator
	Li Y(李昱); Zhang MY(张美芸); Long SB(龙世兵); Liu Q(刘琦); Lv HB(吕杭炳); Liu M(刘明)
刊名	SCIeNTIfIC REporTS
	2017-09-11
文献子类	期刊论文
语种	英语
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18175]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Li Y,Zhang MY,Long SB,et al. Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator[J]. SCIeNTIfIC REporTS,2017.
APA	Li Y,Zhang MY,Long SB,Liu Q,Lv HB,&Liu M.(2017).Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator.SCIeNTIfIC REporTS.
MLA	Li Y,et al."Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator".SCIeNTIfIC REporTS (2017).