A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method

	A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method
	Zhang MY(张美芸); Yu ZA(余兆安); Li Y(李阳); Xu DL(许定林); Lv HB(吕杭炳); Liu Q(刘琦); Liu M(刘明); Wang GM(王国明); Long SB(龙世兵)
刊名	IEEE Electron Device Letters
	2015-10-26
公开日期	2016-05-24
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/14917]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Zhang MY,Yu ZA,Li Y,et al. A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method[J]. IEEE Electron Device Letters,2015.
APA	Zhang MY.,Yu ZA.,Li Y.,Xu DL.,Lv HB.,...&Long SB.(2015).A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method.IEEE Electron Device Letters.
MLA	Zhang MY,et al."A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method".IEEE Electron Device Letters (2015).