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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2014     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory 期刊论文 ieee electron device letters, 2014 Shih, Chih-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chen, Jung-Hui; Chen, Kai-Huang; Young, Tai-Fa; Chen, Hsin-Lu; Lou, Jen-Chung; Chu, Tian-Jian; Huang, Syuan-Yong; Bao, Ding-Hua; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 ZnO  RRAM  ultra-violet light  current conduction mechanism  IMPROVEMENT  DEVICES   Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory 期刊论文 ieee electron device letters, 2014 Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 Oxygen accumulation  indium tin oxide  Schottky emission  RRAM  RESISTIVE SWITCHING MEMORIES   Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory 期刊论文 ieee electron device letters, 2014 Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11 RRAM  hydrogen  resistive switching  tri-resistive states  HOPPING CONDUCTION  ORIGIN  RRAM   Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation 期刊论文 ieee electron device letters, 2014 Huang, Xuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Zhang, Rui; Huang, Syuan-Yong; Chen, Kai-Huang; Chen, Jung-Hui; Wang, Huei-Jruan; Chen, Wen-Jen; Zhang, Fengyan; Chen, Chao; Sze, Simon M. 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11 RRAM  set voltage  zinc oxide  concentration gradient  OXIDE  ELECTRODE  DEVICES   Hydrogen induced redox mechanism in amorphous carbon resistive random access memory 期刊论文 nanoscale research letters, 2014 Chen, Yi-Jiun; Chen, Hsin-Lu; Young, Tai-Fa; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Lou, Jen-Chung; Chu, Tian-Jian; Chen, Jung-Hui; Bao, Ding-Hua; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Carbon  Hydrogen redox  Conjugation double bond  RRAM  CO2 FLUID TREATMENT  RRAM DEVICES  HOPPING CONDUCTION  SILICON  TRANSITION  ORIGIN  FILMS   Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment 期刊论文 journal of supercritical fluids, 2014 Chang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 Supercritical fluid  RRAM  Hydration-dehydration reaction  Tin doping  ELECTROLYTE-BASED RERAM  CONDUCTIVE FILAMENTS  FILM   Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor 期刊论文 ieee electron device letters, 2014 Chen, Yi-Jiun; Chang, Kuan-Chang; Chang, Ting-Chang; Chen, Hsin-Lu; Young, Tai-Fa; Tsai, Tsung-Ming; Zhang, Rui; Chu, Tian-Jian; Ciou, Jian-Fa; Lou, Jen-Chung; Chen, Kai-Huang; Chen, Jung-Hui; Zheng, Jin-Cheng; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 DLC  HfO2  hydrogen  oxygen  RRAM  RANDOM-ACCESS MEMORY  MECHANISM  DEVICES  MODEL  RRAM   Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory 期刊论文 ieee electron device letters, 2014 Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Chen, Kai-Huang; Zhang, Rui; Wang, Zhi-Yang; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chu, Tian-Jian; Huang, Syuan-Yong; Syu, Yong-En; Bao, Ding-Hua; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 RRAM  lithium silicate  dual ion effect  I-V  RESISTIVE SWITCHING MEMORIES  CO2 FLUID TREATMENT  HOPPING CONDUCTION  OXIDE RRAM  DEVICES  ORIGIN