CORC

浏览/检索结果: 共7条,第1-7条 帮助

限定条件                    
已选(0)清除 条数/页:   排序方式:
Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching 期刊论文
ieee 纳米技术汇刊, 2014
Huang, Peng; Wang, Yijiao; Li, Haitong; Gao, Bin; Chen, Bing; Zhang, Feifei; Zeng, Lang; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan
收藏  |  浏览/下载:8/0  |  提交时间:2015/11/10
Impact of Random Interface Traps and Random Dopants in High-k/Metal Gate Junctionless FETs 期刊论文
ieee 纳米技术汇刊, 2014
Wang, Yijiao; Huang, Peng; Wei, Kangliang; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Zhang, Xing; Kang, Jinfeng
收藏  |  浏览/下载:3/0  |  提交时间:2015/11/10
Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET 期刊论文
日本应用物理学杂志, 2014
Wang, Yijiao; Huang, Peng; Xin, Zheng; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng
收藏  |  浏览/下载:1/0  |  提交时间:2015/11/10
Strain affected electronic properties of bilayer tungsten disulfide 期刊论文
日本应用物理学杂志, 2014
Xin, Zheng; Zeng, Lang; Wang, Yijiao; Wei, Kangliang; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan
收藏  |  浏览/下载:2/0  |  提交时间:2015/11/10
Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic 其他
2014-01-01
Wang, Yijiao; Huang, Peng; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng
收藏  |  浏览/下载:4/0  |  提交时间:2017/12/03
Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET 其他
2014-01-01
Wang, Yijiao; Huang, Peng; Xin, Zheng; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng
收藏  |  浏览/下载:3/0  |  提交时间:2017/12/03
Strain affected electronic properties of bilayer tungsten disulfide 其他
2014-01-01
Xin, Zheng; Zeng, Lang; Wang, Yijiao; Wei, Kangliang; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan
收藏  |  浏览/下载:6/0  |  提交时间:2017/12/03


©版权所有 ©2017 CSpace - Powered by CSpace