Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and   Solution Exploration of High Speed and Low Voltage AC Switching

doi:10.1109/TNANO.2014.2340571

CORC > 北京大学 > 信息科学技术学院

	Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching
	Huang, Peng ; Wang, Yijiao ; Li, Haitong ; Gao, Bin ; Chen, Bing ; Zhang, Feifei ; Zeng, Lang ; Du, Gang ; Kang, Jinfeng ; Liu, Xiaoyan
刊名	ieee 纳米技术汇刊
	2014
关键词	AC switching compact model high speed low voltage resistive random access memory (RRAM) voltage-time dilemma RESET MECHANISM BIPOLAR RRAM MEMORY MODEL DEVICES
DOI	10.1109/TNANO.2014.2340571
英文摘要	In this paper, the ac electrical characteristics of metal oxide-based resistive random access memory are investigated based on a developed compact model and the experiment. The voltage-time dilemma phenomenon and the impacts of critical factors on resistive switching speed are addressed. Based on predictions of the model, the small parasitic capacitance, low target high resistance, and large thermal resistance are beneficial to accelerate the resistive switching speed both in SET and RESET processes. The high SET speed and low SET voltage can be achieved by tuning the activation energy of oxygen vacancies. While for the RESET process, the barriers of the release of oxygen ions from electrode and the hopping in resistive switching layer should be turned down simultaneously for high switching speed and low operation voltage.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000345087900015&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); EI; 5; ARTICLE; hp19881031@126.com; wangyijiao@pku.edu.cn; lihaitong@pku.edu.cn; gaobin@pku.edu.cn; bingchen@pku.edu.cn; skyhigh55@126.com; midfieldcommander@gmail.com; gang_du@ime.pku.edu.cn; kangjf@pku.edu.cn; xyliu@ime.pku.edu.cn; 6; 1127-1132; 13
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151967]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Peng,Wang, Yijiao,Li, Haitong,et al. Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching[J]. ieee 纳米技术汇刊,2014.
APA	Huang, Peng.,Wang, Yijiao.,Li, Haitong.,Gao, Bin.,Chen, Bing.,...&Liu, Xiaoyan.(2014).Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching.ieee 纳米技术汇刊.
MLA	Huang, Peng,et al."Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching".ieee 纳米技术汇刊 (2014).