Impact of Random Interface Traps and Random Dopants in High-k/Metal Gate   Junctionless FETs

doi:10.1109/TNANO.2014.2312482

CORC > 北京大学 > 信息科学技术学院

	Impact of Random Interface Traps and Random Dopants in High-k/Metal Gate Junctionless FETs
	Wang, Yijiao ; Huang, Peng ; Wei, Kangliang ; Zeng, Lang ; Liu, Xiaoyan ; Du, Gang ; Zhang, Xing ; Kang, Jinfeng
刊名	ieee 纳米技术汇刊
	2014
关键词	High-k/metal gate (HKMG) junctionless FET (JL-FET) random dopant fluctuation (RDF) random interface traps (RITs) TCAD simulation MOSFETS FLUCTUATIONS VARIABILITY SIMULATION
DOI	10.1109/TNANO.2014.2312482
英文摘要	In this paper, the fluctuation of random interface traps (RITs) and its interaction with random dopants of 22-nm junctionless FETs (JL-FET) with high-k/metal gate (HKMG) are investigated with 3-D statistical TCAD simulations. The impacts of RIT and random dopant fluctuation (RDF) on the performances of JL-FET are evaluated separately and together. The results show that acceptor-like interface traps mainly affect the drive current, while donor-like interface traps have a significant impact on the subthreshold region. RIT and RDF have different impacts on device performance. Although the influence of RDF is larger than RIT, the impact of RIT cannot be neglected due to their strong correlation. The variation induced by RIT and RDF should be taken into account simultaneously for HKMG JL-FETs.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000336091000027&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); EI; 0; ARTICLE; wangyijiao@pku.edu.cn; hp19881031@126.com; gary.weikangliang@gmail.com; midfieldcommander@gmail.com; xyliu@ime.pku.edu.cn; gang_du@ime.pku.edu.cn; zhx@pku.edu.cn; kangjf@pku.edu.cn; 3; 584-588; 13
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152110]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Yijiao,Huang, Peng,Wei, Kangliang,et al. Impact of Random Interface Traps and Random Dopants in High-k/Metal Gate Junctionless FETs[J]. ieee 纳米技术汇刊,2014.
APA	Wang, Yijiao.,Huang, Peng.,Wei, Kangliang.,Zeng, Lang.,Liu, Xiaoyan.,...&Kang, Jinfeng.(2014).Impact of Random Interface Traps and Random Dopants in High-k/Metal Gate Junctionless FETs.ieee 纳米技术汇刊.
MLA	Wang, Yijiao,et al."Impact of Random Interface Traps and Random Dopants in High-k/Metal Gate Junctionless FETs".ieee 纳米技术汇刊 (2014).