Strain affected electronic properties of bilayer tungsten disulfide

doi:10.7567/JJAP.53.04EN06

CORC > 北京大学 > 信息科学技术学院

	Strain affected electronic properties of bilayer tungsten disulfide
	Xin, Zheng ; Zeng, Lang ; Wang, Yijiao ; Wei, Kangliang ; Du, Gang ; Kang, Jinfeng ; Liu, Xiaoyan
刊名	日本应用物理学杂志
	2014
关键词	MOS2 NANORIBBON TRANSISTORS MONOLAYER
DOI	10.7567/JJAP.53.04EN06
英文摘要	The strain effect on the electronic properties of bilayer tungsten disulfide (WS2) is investigated by density functional theory (DFT). It is found that the band gap and carrier effective masses of AA and AB stacking bilayer WS2 decrease with increasing tensile strain. However, their band gap first increases under small compressive strain and then decreases with large compressive strain applied. These results can be explained by the interplay between the projected density of states contributed by the p-orbital of sulfur (S) atoms and those contributed by the d-orbital of tungsten (W) atoms. To measure this interaction quantitatively, a parameter N is proposed in our work. This work could serve as a guideline for the future manipulation of the electronic properties of WS2. (C) 2014 The Japan Society of Applied Physics; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000338185100150&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 1; ARTICLE; zenglang@ime.pku.edu.cn; xyliu@ime.pku.edu.cn; 4,SI; 53
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152137]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xin, Zheng,Zeng, Lang,Wang, Yijiao,et al. Strain affected electronic properties of bilayer tungsten disulfide[J]. 日本应用物理学杂志,2014.
APA	Xin, Zheng.,Zeng, Lang.,Wang, Yijiao.,Wei, Kangliang.,Du, Gang.,...&Liu, Xiaoyan.(2014).Strain affected electronic properties of bilayer tungsten disulfide.日本应用物理学杂志.
MLA	Xin, Zheng,et al."Strain affected electronic properties of bilayer tungsten disulfide".日本应用物理学杂志 (2014).