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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2014    内容类型：期刊论文    专题：上海大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Extraction of density-of-states in amorphous InGaZnO thin-film transistors from temperature stress studies 期刊论文 CURRENT APPLIED PHYSICS, 2014, 卷号: 14, 页码: 1713-1717 作者:  Ding, Xingwei[1];  Zhang, Jianhua[2];  Shi, Weimin[3];  Zhang, Hao[4];  Huang, Chuanxin[5] 收藏  |  浏览/下载：16/0  |  提交时间：2019/04/30 IGZO  Thin-film transistors  Density-of-states  Temperature stability   The Al2O3 gate insulator modified by SiO2 film to improve the performance of IGZO TFTs 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2014, 卷号: 69, 页码: 204-211 作者:  Ding, Xingwei[1];  Zhang, Jianhua[2];  Li, Jun[3];  Shi, Weimin[4];  Zhang, Hao[5] 收藏  |  浏览/下载：7/0  |  提交时间：2019/04/30 IGZO thin film transistor  ALD Al2O3 gate insulator  SiO2 modification  Bias stability   ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor 期刊论文 MICROELECTRONICS RELIABILITY, 2014, 卷号: 54, 页码: 2401-2405 作者:  Ding, Xingwei[1];  Zhang, Jianhua[2];  Zhang, Hao[3];  Ding, He[4];  Huang, Chuanxin[5] 收藏  |  浏览/下载：16/0  |  提交时间：2019/04/30 IGZO thin-film transistor  ZrO2-Al2O3 bilayer gate insulator  ALD  Bias stability   Effect of sputtering power densities on density-of-states in InZnO thin-film transistor 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2014, 卷号: 74, 页码: 11-18 作者:  Ding, Xingwei[1];  Ding, He[2];  Huang, Chuanxin[3];  Zhang, Hao[4];  Shi, Weimin[5] 收藏  |  浏览/下载：15/0  |  提交时间：2019/04/30 Sputtering power densities  IZO thin-film transistors  Atomic layer deposition  Density-of-states   Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2014, 卷号: 76, 页码: 156-162 作者:  Ding, Xingwei[1];  Zhang, Hao[2];  Ding, He[3];  Zhang, Jianhua[4];  Huang, Chuanxin[5] 收藏  |  浏览/下载：16/0  |  提交时间：2019/04/30 Thin-film transistors  Dual-active-layers  Atomic layer deposition  Density-of-states   Characterization of density-of-states in indium zinc oxide thin-film transistor from temperature stress studies 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 卷号: 27, 页码: 154-158 作者:  Ding, Xingwei[1];  Zhang, Jianhua[2];  Shi, Weimin[3];  Zhang, Hao[4];  Huang, Chuanxin[5] 收藏  |  浏览/下载：13/0  |  提交时间：2019/04/30 IZO thin-film transistors  Atomic layer deposition  Density-of-states  Temperature stress instability   The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors 期刊论文 OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 卷号: 8, 页码: 659-662 作者:  Ding, Xingwei[1];  Shi, Weimin[2];  Zhang, Jianhua[3];  Zhang, Hao[4];  Li, Jun[5] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/30 IGZO  Thin film transistor  SiO2  Al2O3  Gate insulator