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	ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor
	Ding, Xingwei[1]; Zhang, Jianhua[2]; Zhang, Hao[3]; Ding, He[4]; Huang, Chuanxin[5]; Li, Jun[6]; Shi, Weimin[7]; Jiang, Xueyin[8]; Zhang, Zhilin[9]
刊名	MICROELECTRONICS RELIABILITY
	2014
卷号	54页码:2401-2405
关键词	IGZO thin-film transistor ZrO2-Al2O3 bilayer gate insulator ALD Bias stability
ISSN号	0026-2714
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2275890
专题	上海大学
作者单位	1.[1]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 6.[6]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 7.[7]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 8.[8]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 9.[9]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 10.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Ding, Xingwei[1],Zhang, Jianhua[2],Zhang, Hao[3],et al. ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor[J]. MICROELECTRONICS RELIABILITY,2014,54:2401-2405.
APA	Ding, Xingwei[1].,Zhang, Jianhua[2].,Zhang, Hao[3].,Ding, He[4].,Huang, Chuanxin[5].,...&Zhang, Zhilin[9].(2014).ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor.MICROELECTRONICS RELIABILITY,54,2401-2405.
MLA	Ding, Xingwei[1],et al."ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor".MICROELECTRONICS RELIABILITY 54(2014):2401-2405.

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