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	The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors
	Ding, Xingwei[1]; Shi, Weimin[2]; Zhang, Jianhua[3]; Zhang, Hao[4]; Li, Jun[5]; Jiang, Xueyin[6]; Zhang, Zhilin[7]
刊名	OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
	2014
卷号	8页码:659-662
关键词	IGZO Thin film transistor SiO2 Al2O3 Gate insulator
ISSN号	1842-6573
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2275915
专题	上海大学
作者单位	1.Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 2.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Ding, Xingwei[1],Shi, Weimin[2],Zhang, Jianhua[3],et al. The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors[J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,2014,8:659-662.
APA	Ding, Xingwei[1].,Shi, Weimin[2].,Zhang, Jianhua[3].,Zhang, Hao[4].,Li, Jun[5].,...&Zhang, Zhilin[7].(2014).The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors.OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS,8,659-662.
MLA	Ding, Xingwei[1],et al."The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors".OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 8(2014):659-662.

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