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	The Al2O3 gate insulator modified by SiO2 film to improve the performance of IGZO TFTs
	Ding, Xingwei[1]; Zhang, Jianhua[2]; Li, Jun[3]; Shi, Weimin[4]; Zhang, Hao[5]; Jiang, Xueyin[6]; Zhang, Zhilin[7]
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2014
卷号	69页码:204-211
关键词	IGZO thin film transistor ALD Al2O3 gate insulator SiO2 modification Bias stability
ISSN号	0749-6036
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2275881
专题	上海大学
作者单位	1.[1]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 3.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 4.[3]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 5.[4]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 6.[5]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 7.[6]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 8.[7]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 9.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Ding, Xingwei[1],Zhang, Jianhua[2],Li, Jun[3],et al. The Al2O3 gate insulator modified by SiO2 film to improve the performance of IGZO TFTs[J]. SUPERLATTICES AND MICROSTRUCTURES,2014,69:204-211.
APA	Ding, Xingwei[1].,Zhang, Jianhua[2].,Li, Jun[3].,Shi, Weimin[4].,Zhang, Hao[5].,...&Zhang, Zhilin[7].(2014).The Al2O3 gate insulator modified by SiO2 film to improve the performance of IGZO TFTs.SUPERLATTICES AND MICROSTRUCTURES,69,204-211.
MLA	Ding, Xingwei[1],et al."The Al2O3 gate insulator modified by SiO2 film to improve the performance of IGZO TFTs".SUPERLATTICES AND MICROSTRUCTURES 69(2014):204-211.

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