CORC

浏览/检索结果: 共6条,第1-6条 帮助

限定条件                    
已选(0)清除 条数/页:   排序方式:
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Applied physics letters, 2012, 期号: 11, 页码: 113501-1-113501-4
作者:  Chongbiao Luan;  Zhaojun Lin;  Yuanjie Lv;  Lingguo Meng;  Yingxia Yu
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/23
Polarization Coulomb field scattering in In_(0.18)Al_(0.82)N/AlN/GaN heterostructure field-effect transistors 期刊论文
Journal of Applied Physics, 2012, 期号: 5, 页码: 054513-1-054513-5
作者:  Chongbiao Luan;  Zhaojun Lin;  Zhihong Feng;  Lingguo Meng;  Yuanjie Lv
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/23
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11
作者:  Luan, Chongbiao;  Lin, Zhaojun;  Lv, Yuanjie;  Meng, Lingguo;  Yu, Yingxia
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/23
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5
作者:  Luan, Chongbiao;  Lin, Zhaojun;  Feng, Zhihong;  Meng, Lingguo;  Lv, Yuanjie
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/23
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7
作者:  Lv, Yuanjie;  Lin, Zhaojun;  Meng, Lingguo;  Luan, Chongbiao;  Cao, Zhifang
收藏  |  浏览/下载:1/0  |  提交时间:2019/12/23
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 会议论文
作者:  Luan, Chongbiao;  Lin, Zhaojun;  Feng, Zhihong;  Meng, Lingguo;  Lv, Yuanjie
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/31


©版权所有 ©2017 CSpace - Powered by CSpace