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Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
Rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  Liang Jiran;  Hu Ming;  Kan Qiang;  Liang Xiuqin;  Wang Xiaodong
收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12
Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 5
作者:  Wang Wei;  Su Shao-Jian;  Zheng Jun;  Zhang Guang-Ze;  Zuo Yu-Hua
收藏  |  浏览/下载：113/0  |  提交时间：2019/05/12
Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy 期刊论文
Materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
作者:  Jin, Lan;  Zhou, Huiying;  Qu, Shengchun;  Wang, Zhanguo
收藏  |  浏览/下载：100/0  |  提交时间：2019/05/12
Growth of gan film on si (111) substrate using aln sandwich structure as buffer 期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan, Xu;  Wei, Meng;  Yang, Cuibai;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载：43/0  |  提交时间：2019/05/12
Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing 期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
作者:  Wang, Wei;  Su, Shaojian;  Zheng, Jun;  Zhang, Guangze;  Xue, Chunlai
收藏  |  浏览/下载：124/0  |  提交时间：2019/05/12
Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment 期刊论文
ieee transactions on nanotechnology, 2011, 卷号: 10, 期号: 1, 页码: 53-58
Lu XF; Balocco C; Yang FH; Song AM
收藏  |  浏览/下载：72/7  |  提交时间：2011/07/05
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载：98/7  |  提交时间：2011/07/05
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  Li GK
收藏  |  浏览/下载：76/2  |  提交时间：2011/07/05
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：82/5  |  提交时间：2011/07/05
Localized flexible integration of high-efficiency surface enhanced raman scattering (sers) monitors into microfluidic channels 期刊论文
Lab on a chip, 2011, 卷号: 11, 期号: 19, 页码: 3347-3351
作者:  Xu, Bin-Bin;  Ma, Zhuo-Chen;  Wang, Lei;  Zhang, Ran;  Niu, Li-Gang
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12

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