QQ客服 官方微博 反馈留言

	Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates
	Wang Wei; Su Shao-Jian; Zheng Jun; Zhang Guang-Ze; Zuo Yu-Hua; Cheng Bu-Wen; Wang Qi-Ming
刊名	Chinese physics b
	2011-06-01
卷号	20期号:6页码:5
关键词	Gesn alloys Strained Strain-relaxed Molecular beam epitaxy
ISSN号	1674-1056
DOI	10.1088/1674-1056/20/6/068103
通讯作者	Cheng bu-wen(cbw@semi.ac.cn)
英文摘要	Epitaxial ge1-xsnx alloys are grown separately on a ge-buffer/si(100) substrate and directly on a si(100)subs trate by molecular beam epitaxy (mbe) at low temperature. in the case of the ge buffer/si(100)substrate, a high crystalline quality strained ge0.97sn0.03 alloy is grown, with a chi(min) value of 6.7% measured by channeling and random rutherford backscattering spectrometry (rbs), and a surface root-mean-square (rms) roughness of 1.568 nm obtained by atomic force microscopy (afm). in the case of the si(100)substrate, strain-relaxed ge0.97sn0.03 alloys are epitaxially grown at 150 degrees c-300 degrees c, with the degree of strain relaxation being more than 96%. the x-ray diffraction (xrd) and afm measurements demonstrate that the alloys each have a good crystallin equality and a relatively flat surface. the predominant defects accommodating the large misfit are lomer edge dislocations at the interface,which are parallel to the interface plane and should not degrade electrical properties and device performance.
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000291388800076
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428172
专题	半导体研究所
通讯作者	Cheng Bu-Wen
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang Wei,Su Shao-Jian,Zheng Jun,et al. Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates[J]. Chinese physics b,2011,20(6):5.
APA	Wang Wei.,Su Shao-Jian.,Zheng Jun.,Zhang Guang-Ze.,Zuo Yu-Hua.,...&Wang Qi-Ming.(2011).Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates.Chinese physics b,20(6),5.
MLA	Wang Wei,et al."Strained and strain-relaxed epitaxial ge1-xsnx alloys on si(100) substrates".Chinese physics b 20.6(2011):5.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。