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CORC

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A Simple Method to Decompose the Amplitudes of Different Random Variation Sources in FinFET Technology 其他
2016-01-01
Jiang, Xiaobo; Wang, Runsheng; Huang, Ru; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen
收藏  |  浏览/下载：1/0  |  提交时间：2017/12/03
A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016
Jiang, Xiaobo; Guo, Shaofeng; Wang, Runsheng; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04
Line-edge roughness induced single event transient variation in SOI FinFETs 期刊论文
半导体学报（英文版）, 2015
Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method 期刊论文
ieee电子器件汇刊, 2013
Jiang, Xiaobo; Wang, Runsheng; Yu, Tao; Chen, Jiang; Huang, Ru
收藏  |  浏览/下载：11/0  |  提交时间：2015/11/10
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability 期刊论文
ieee电子器件汇刊, 2013
Wang, Runsheng; Jiang, Xiaobo; Yu, Tao; Fan, Jiewen; Chen, Jiang; Pan, David Z.; Huang, Ru
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/10
Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX 期刊论文
ieee电子器件汇刊, 2013
Yang, Yunxiang; Markov, Stanislav; Cheng, Binjie; Zain, Anis Suhaila Mohd; Liu, Xiaoyan; Asenov, Asen
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13
Simulation of correlated line-edge roughness in multi-gate devices 其他
2013-01-01
Jiang, Xiaobo; Wang, Runsheng; Huang, Ru; Chen, Jiang
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13
Investigations on the Correlation between Line-edge-roughness (LER) and Line-width-roughness (LWR) in Nanoscale CMOS Technology 其他
2012-01-01
Jiang, Xiaobo; Li, Meng; Wang, Runsheng; Chen, Jiang; Huang, Ru
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13
Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization 期刊论文
ieee电子器件汇刊, 2011
Wang, Runsheng; Jing Zhuge; Huang, Ru; Yu, Tao; Zou, Jibin; Kim, Dong-Won; Park, Donggun; Wang, Yangyuan
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10
Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs 期刊论文
ieee 纳米技术汇刊, 2011
Yang, Yunxiang; Yu, Shimeng; Zeng, Lang; Du, Gang; Kang, Jinfeng; Zhao, Yuning; Han, Ruqi; Liu, Xiaoyan
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10

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