Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis   of Variation Sources and Experimental Characterization

doi:10.1109/TED.2011.2115246

CORC > 北京大学 > 信息科学技术学院

	Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization
	Wang, Runsheng ; Jing Zhuge ; Huang, Ru ; Yu, Tao ; Zou, Jibin ; Kim, Dong-Won ; Park, Donggun ; Wang, Yangyuan
刊名	ieee电子器件汇刊
	2011
关键词	Line-edge roughness (LER) metal-gate work function variation (WFV) modeling random dopant fluctuation (RDF) Si nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) (SNWT) variability INTRINSIC PARAMETER FLUCTUATIONS THRESHOLD VOLTAGE FLUCTUATION CARRIER TRANSPORT PERFORMANCE IMPACT TRANSISTORS CMOS DECANANOMETER INTEGRATION MOBILITY
DOI	10.1109/TED.2011.2115246
英文摘要	The characteristic variability in gate-all-around (GAA) Si nanowire (NW) metal-oxide-semiconductor field-effect transistors (SNWTs) is analyzed and experimentally investigated in this paper. First, the main variation sources in SNWTs are overviewed, with the detailed discussion on the specific sources of NW cross-sectional shape variation, random dopant fluctuation in NW source/drain extension regions and NW line-edge roughness (LER). Then, following the measurement-modeling approach, via calibrated statistical simulation that is based on the modified analytical model for GAA SNWTs with corrections of quantum effects and quasi-ballistic transport, the variability sources in SNWTs are experimentally extracted from the measured devices with 10-nm-diameter NW channels and TiN metal gate. The results indicate that NW radius variation and metal-gate work function variation dominate both the threshold voltage and ON-current variations due to the ultrascaled dimensions and strong quantum effects of GAA NW structure. The NW LER also contributes, but relatively less, to the threshold voltage variation.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000293708500015&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); 21; ARTICLE; 8,SI; 2317-2325; 58
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152573]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Runsheng,Jing Zhuge,Huang, Ru,et al. Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization[J]. ieee电子器件汇刊,2011.
APA	Wang, Runsheng.,Jing Zhuge.,Huang, Ru.,Yu, Tao.,Zou, Jibin.,...&Wang, Yangyuan.(2011).Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization.ieee电子器件汇刊.
MLA	Wang, Runsheng,et al."Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization".ieee电子器件汇刊 (2011).