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期刊论文 [41]
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Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method
期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 750, 页码: 182-188
作者:
Kai Yu
;
Fan Yang
;
Hui Cong
;
Lin Zhou
;
Qingyun Liu
;
Lichun Zhang
;
Buwen Cheng
;
Chunlai Xue
;
Yuhua Zuo
;
Chuanbo Li
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/11/19
Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 750, 页码: 182-188
作者:
Yu, Kai
;
Yang, Fan
;
Cong, Hui
;
Zhou, Lin
;
Liu, Qingyun
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/11
GeOI
High crystal quality
Back-gate pMOSFET
Field-effect hole
mobility
New concept of planar germanium MOSFET with stacked germanide layers at source/drain
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015
Xu, Hao
;
Sun, Lei
;
Zhang, Yi-Bo
;
Han, Jing-Wen
;
Wang, Yi
;
Zhang, Sheng-Dong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
HIGH-KAPPA GATE
SCHOTTKY SOURCE/DRAIN
METAL GATE
MOBILITY
CONTACTS
SI
TECHNOLOGY
TRANSISTOR
SUBSTRATE
PMOSFETS
Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure
期刊论文
Applied Surface Science, 2015, 卷号: 356, 期号: 30, 页码: 1052-1057
作者:
Lin Ye
;
Miao Zhang
;
Zengfeng Di
;
Zhongyin Xue
;
Jianhong Yang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/10/09
Defect density
Condensation
Defects
Dislocations (crystals)
Germanium
Hole mobility
Interfaces (materials)
Semiconductor insulator boundaries
Silicon alloys
Silicon wafers
Density of defects
Ge condensation
Ge on insulators
Low defect densities
SiGe-on-insulator structures
Threading dislocation
Threading dislocation densities
Wafer manufacturing
The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness
期刊论文
http://dx.doi.org/10.1063/1.4884063, 2014
Wu, Po-Hung
;
Huang, Ying-Sheng
;
Hsu, Hung-Pin
;
Li, Cheng
;
Huang, Shi-Hao
;
Tiong, Kwong-Kau
;
李成
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/07/22
QUANTUM-WELL STRUCTURES
THERMAL-EXPANSION
ROOM-TEMPERATURE
ON-INSULATOR
WAVE-GUIDE
GERMANIUM
SILICON
SPECTROSCOPY
EDGE
GAAS
Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor
期刊论文
chinese physics b, 2014
Yun Quan-Xin
;
Li Ming
;
An Xia
;
Lin Meng
;
Liu Peng-Qiang
;
Li Zhi-Qiang
;
Zhang Bing-Xin
;
Xia Yu-Xuan
;
Zhang Hao
;
Zhang Xing
;
Huang Ru
;
Wang Yang-Yuan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
germanium
roughness
interface trap density
interfacial layer thickness
HYDROGEN
GE
DIELECTRICS
NITRIDATION
ROUGHNESS
OXIDATION
INSULATOR
Non-homogeneous SiGe-on-insulator formed by germanium condensation process
期刊论文
http://dx.doi.org/10.1088/1674-1056/23/4/048109, 2014
Huang, Shi-Hao
;
Li, Cheng
;
Lu, Wei-Fang
;
Wang, Chen
;
Lin, Guang-Yang
;
Lai, Hong-Kai
;
Chen, Song-Yan
;
李成
;
赖虹凯
;
陈松岩
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/07/22
Condensation
Germanium
Silicon alloys
Silicon on insulator technology
Transmission electron microscopy
Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate
期刊论文
http://dx.doi.org/10.1007/s11801-014-4021-y, 2014
Chen, Li-qun
;
Chen, Yang-hua
;
Li, Cheng
;
李成
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/07/22
Cavity resonators
Chemical vapor deposition
Germanium
Interfaces (materials)
Photoluminescence
Silicon
Silicon on insulator technology
Substrates
A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission
期刊论文
http://dx.doi.org/10.1364/OE.21.000640, 2013
Huang, Shihao
;
Lu, Weifang
;
Li, Cheng
;
Huang, Wei
;
Lai, Hongkai
;
Chen, Songyan
;
李成
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2013/12/12
THERMAL-EXPANSION
SILICON
GE
SUBSTRATE
FILMS
OPTOELECTRONICS
GAIN
MASS
A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission
期刊论文
http://dx.doi.org/10.1364/OE.21.000640, 2013
Huang, Shihao
;
Lu, Weifang
;
Li, Cheng
;
Huang, Wei
;
Lai, Hongkai
;
Chen, Songyan
;
李成
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/07/22
THERMAL-EXPANSION
SILICON
GE
SUBSTRATE
FILMS
OPTOELECTRONICS
GAIN
MASS
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