Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

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	Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate
	Chen, Li-qun ; Chen, Yang-hua ; Li, Cheng ; Li C(李成)
刊名	http://dx.doi.org/10.1007/s11801-014-4021-y
	2014
关键词	Cavity resonators Chemical vapor deposition Germanium Interfaces (materials) Photoluminescence Silicon Silicon on insulator technology Substrates
英文摘要	The tensile strained Ge/SiGe multiple quantum wells (MQWs) grown on a silicon-on-insulator (SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition. Room temperature direct band photoluminescence from Ge quantum wells on SOI substrate is strongly modulated by Fabry-Perot cavity formed between the surface of Ge and the interface of buried SiO2. The photoluminescence peak intensity at 1.58 μm is enhanced by about 21 times compared with that from the Ge/SiGe quantum wells on Si substrate, and the full width at half maximum (FWHM) is significantly reduced. It is suggested that tensile strained Ge/SiGe multiple quantum wells are one of the promising materials for Si-based microcavity light emitting devices. ? 2014 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
语种	英语
出版者	Springer Verlag
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/92267]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Chen, Li-qun,Chen, Yang-hua,Li, Cheng,et al. Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate[J]. http://dx.doi.org/10.1007/s11801-014-4021-y,2014.
APA	Chen, Li-qun,Chen, Yang-hua,Li, Cheng,&李成.(2014).Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate.http://dx.doi.org/10.1007/s11801-014-4021-y.
MLA	Chen, Li-qun,et al."Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate".http://dx.doi.org/10.1007/s11801-014-4021-y (2014).