A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission

CORC > 厦门大学 > 物理技术－已发表论文

	A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission
	Huang, Shihao ; Lu, Weifang ; Li, Cheng ; Huang, Wei ; Lai, Hongkai ; Chen, Songyan ; Li C(李成)
刊名	http://dx.doi.org/10.1364/OE.21.000640
	2013-01-14
关键词	THERMAL-EXPANSION SILICON GE SUBSTRATE FILMS OPTOELECTRONICS GAIN MASS
英文摘要	We present a method to introduce a large biaxial tensile strain in an ultra-thin germanium-on-insulator (GOI) using selective oxidation of SiGe epilayer on silicon-on-insulator (SOI) substrate. A circular patterned Si0.81Ge0.19 mesa on SOI substrate with the sidewall protected by Si3N4 or SiO2 is selectively oxidized to generate local 12 nm GOI with high crystal quality, which shows enhanced photoluminescence due to large tensile strain. Direct band photoluminescence peak significantly shifts to longer wavelength as compared to that from bulk Ge due to a combination of strain-induced band gap reduction and quantum confinement effect. (C) 2013 Optical Society of America
语种	英语
出版者	Optical Society of America
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91547]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Huang, Shihao,Lu, Weifang,Li, Cheng,et al. A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission[J]. http://dx.doi.org/10.1364/OE.21.000640,2013.
APA	Huang, Shihao.,Lu, Weifang.,Li, Cheng.,Huang, Wei.,Lai, Hongkai.,...&李成.(2013).A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission.http://dx.doi.org/10.1364/OE.21.000640.
MLA	Huang, Shihao,et al."A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission".http://dx.doi.org/10.1364/OE.21.000640 (2013).