Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure

	Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure
	Lin Ye; Miao Zhang; Zengfeng Di; Zhongyin Xue; Jianhong Yang; Xi Wang
刊名	Applied Surface Science
	2015
卷号	356 期号:30 页码:1052-1057
关键词	Defect density Condensation Defects Dislocations (crystals) Germanium Hole mobility Interfaces (materials) Semiconductor insulator boundaries Silicon alloys Silicon wafers Density of defects Ge condensation Ge on insulators Low defect densities SiGe-on-insulator structures Threading dislocation Threading dislocation densities Wafer manufacturing
WOS记录号	WOS:000365351600137
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/113459]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Lin Ye,Miao Zhang,Zengfeng Di,et al. Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure[J]. Applied Surface Science,2015,356(30):1052-1057.
APA	Lin Ye,Miao Zhang,Zengfeng Di,Zhongyin Xue,Jianhong Yang,&Xi Wang.(2015).Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure.Applied Surface Science,356(30),1052-1057.
MLA	Lin Ye,et al."Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure".Applied Surface Science 356.30(2015):1052-1057.